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Performance of a MIS Type Pd-Cr/AlN/Si Hydrogen Sensor

  • Linfeng Zhang (a1), Ibrahim A. Al-Homoudi (a2), H. Rahman (a3), Erik F. McCullen (a1), Lajos Rimai (a1), Ron J. Baird (a1), Ratna Naik (a4), Golam Newaz (a2), Gregory W. Auner (a1) and K. Y. Simon Ng (a3)...

Abstract

An MIS Hydrogen sensor with a Pd0.96Cr0.04/AlN/Si structure was fabricated, exhibiting the dynamic range considerably wider than that of analogous devices with pure Pd gates. A useful response could be obtained for Hydrogen concentrations as large as 50, 000 ppm. Although the response amplitude was much reduced at the lower concentrations, satisfactory signal to noise down to 50 ppm could be obtained. The saturating magnitude of the electrical response is in the range of 0.1 to 0.5 V, which is the same as that for the pure Pd gated devices, inspite of the 3 orders of magnitude difference in the saturation hydrogen concentration. This result will be discussed in terms of the response mechanism of these devices.

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[1] Serina, F., Huang, C., Auner, G. W., Naik, R., Ng, K. Y. S., and Rimai, L., Pd/AlN/Si or SiC Structure for Hydrogen Sensing Device, Material Research Society Symposium, 622 (2001) T1.3.1–T1.3.6.
[2] McCullen, E.F., Mo, W., Haripriya, E.P., Rimai, L., Naik, R., Ng, K.Y.S., and Auner, G.W., Palladium/Aluminum gate metal/insulator/Silicon balanced capacitors for selective Hydrogen sensing, Material Research Society Symposium, 693 (2002)
[3] McCullen, E.F., Mo, W., Haripriya, E.P., Rimai, L., Naik, R., Ng, K.Y.S., and Auner, G.W., Electrical characterization of metal/AlN/Si thin film hydrogen sensors with Pd and Al gates, J. Appl. Phys. 93 (2003) 57575762.
[4] Eriksson, M., Olsson, L., Helmersson, U., Erlandsson, R., Ekedahl, L. G., Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature, Thin Solid Films 342 (1999) 297306.
[5] Erlandsson, R., Eriksson, M., Olsson, L., Helmersson, U., Lundstrom, I., Petersson, L. G, Gas-induced restructuring of palladium model catalysts studied with atomic force microscopy, J. Vac. Sci. Technol. 9 (1991) 825828.
[6] Serina, F., Huang, C., Auner, G. W., Naik, R., Ng, K. Y. S., and Rimai, L., Pd/AlN/SiC thin film devices for selective hydrogen sensing, Applied Physics Letter, 79(20), (2001) 33503352.

Performance of a MIS Type Pd-Cr/AlN/Si Hydrogen Sensor

  • Linfeng Zhang (a1), Ibrahim A. Al-Homoudi (a2), H. Rahman (a3), Erik F. McCullen (a1), Lajos Rimai (a1), Ron J. Baird (a1), Ratna Naik (a4), Golam Newaz (a2), Gregory W. Auner (a1) and K. Y. Simon Ng (a3)...

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