Skip to main content Accessibility help
×
Home

Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

  • K. J. Linthicum (a1), T. Gehrke (a1), D. Thomson (a1), C. Ronning (a1), E. P. Carlson (a1), C. A. Zorman (a2), M. Mehregany (a2) and R. F. Davis (a1)...

Abstract

Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

Copyright

References

Hide All
1. Nam, O., Zheleva, T., Brcmser, M., and Davis, R., Appi. Phys. Lett., 71, 2638(1997).10.1063/1.120164
2. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett., 73,481 (1998). 31210.1063/1.121907
3. Marchand, H., Wu, X., lbbetson, J., Fini, P., Kozodoy, P., Keller, S., Speck, J., Denbaars, S., and Mishra, U., Appl. Phys. Lett., 73,747 (1998).10.1063/1.121988
4. Zhong, H., Johnson, M., McNulty, T., Brown, J., Cook, J. Jr, Schezina, J., Materials Internet Journal, Nitride Semiconductor Research, 3, 6, (1998).
5. Nakamura, , Senoh, M., Nagahama, S., Iwasa, N., Yamanda, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Proc. of the 2 “d Int. Conf. On Nitride Semicond., Tokushima, Japan, October, 1997
6. MRS Internet Journal of Nitride Semiconductor Research, January 13, 1999
7. Linthicum, K. J., Gehrke, T., Thomson, D.B., Carlson, E.P., Rajagopal, P., Smith, T., and Davis, R.F., (submitted to Applied Physics Letters)
8. Linthicum, K. J., Gehrke, T., Thomson, D.B., Tracy, K.M., Carlson, E.P., T,Smith, P., Smith, T.S., Zheleva, T.S., Zorman, C.A., Mehregany, M., and Davis, R.F., MRS Internet J. Nitride Semicond. Res 4S1, G4.9 (1999).10.1557/S1092578300002921
9. Gehrke, T., Linthicum, K. J., Thomson, D.B., Rajagopal, P., Batchelor, A. D. and Davis, R. F., MRS Internet J. Nitride Semicond. Res 4S1, G3.2 (1999).10.1557/S1092578300002337
10. Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Hartlieb, P., Zheleva, T. S. and Davis, R. F., MRS Internet 11 Nitride Semicond. Res 4S1, G3.37 (1999). “Zheleva, T. S., Thomson, D.B., Smith, S., Rajagopal, P., Linthicum, K. J., Gehrke, T., and Davis, R. F., MRS Internet J. Nitride Semicond. Res 4S1, G3.38 (1999).
12. archland, H M, Zang, N., Zhao, L., Golan, Y., Rosner, S.J., Girolami, G., Fini, P.T., Ibbetson, J.P., Keller, S., Denbaars, S., Speck, J., and Mishra, U.K., MRS Internet J. Nitride Semicond. Res 4, 2 (1999).
13. Kung, P., Walker, D., Hamilton, M., Diaz, J., and Razeghi, M., Appl. Phys. Lett., 74, 570(1998).10.1063/1.123148
14. Weeks, T., Bremser, M., Ailey, K., Carlson, E., Perry, W., and Davis, R., Appl. Phys. Lett., 67,401 (1995).10.1063/1.114642
15. Zorman, C., Fleischman, A., Dewa, A., Mehregany, M., Jacob, C., Nishino, S., and Pirouz, P., J. Appl. Phys., 78, 5136(1995).10.1063/1.359745

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed