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PE-CVD of Fluorocarbon/Silicon Oxide Composite thin Films from TFE and HMDSO

Published online by Cambridge University Press:  10 February 2011

T. Shirafuji ,
Y. Hayashi  and
S. Nishino
T. Shirafuji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585 JAPAN, sirafuji@dj.kit.ac.jp
Y. Hayashi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585 JAPAN, sirafuji@dj.kit.ac.jp
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585 JAPAN, sirafuji@dj.kit.ac.jp
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Abstract

Fluorocarbon/silicon oxide composite thin films were prepared, expecting higher thermal stability, by mixing hexamethyldisiloxane (HMDSO, (CH 3) 3-Si-O-Si-(CH 3)3) with tetrafluoroethylene (TFE, CF2=CF2) using an RF( 13.56 MHz) PE-CVD method for the purpose of application to low-k IMDs. Structure of the deposited films was investigated by XPS and FT-IR. Film composition can be changed gradually from fluorinated carbon to organic siloxane by changing the HMDSO mixing ratio. The films possessed dielectric constants less than 2.5 for HMDSO mixing ratios less than 10%. Thermal treatment of the films revealed that C-Fn, Si-O-Si, Si-(CH3)n and Si-(CH2)n-Si bonds were stable to 400°C, but C-Hn bonds were not. In situ gas-phase FT-IR spectroscopy was performed on the TFE/HMDSO plasma to help determine reaction mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 544: Symposium Y – Plasma Deposition and Treatment of Polymers , 1998 , 173
Copyright
Copyright © Materials Research Society 1999

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