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The p-channel a-Si:H Thin Film Transistor with Plasma Etched Copper Electrodes

Published online by Cambridge University Press:  21 March 2011

Helinda Nominanda ,
Guojun Liu ,
Hyun Ho Lee  and
Yue Kuo
Helinda Nominanda
Affiliation:
Thin Film Nano and Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Guojun Liu
Affiliation:
Thin Film Nano and Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Hyun Ho Lee
Affiliation:
Thin Film Nano and Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Yue Kuo
Affiliation:
Thin Film Nano and Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
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Abstract

P-channel thin film transistors (TFTs) with a copper (Cu) gate, source, and drain electrodes, prepared by a novel plasma etching process, have been fabricated and studied. The p-channel TFT characteristics are similar to those of the p-channel TFT with Mo electrodes. The influence of the channel length on the TFT characteristics, such as mobility, threshold voltage, and on-off current ratio, was examined. In spite of its low mobility, good device characteristics, such as ohmic contacts, were obtained. Most of the TFT characteristics, except the threshold voltage, were not affected by an extended high-temperature annealing step. The increase of the threshold voltage was probably due to the lack of a diffusion barrier between the gate Cu and the gate SiNx layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.12
Copyright
Copyright © Materials Research Society 2004

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References

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