Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T17:57:12.862Z Has data issue: false hasContentIssue false
  • English
  • Français

PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

Published online by Cambridge University Press:  25 February 2011

B.E. Cole ,
R.D. Horning  and
P.W. Kruse
B.E. Cole
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
R.D. Horning
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
P.W. Kruse
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
Get access

Abstract

Thin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 185
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Beerman, Henry P., Infrared Physics 15, 225 (1975).Google Scholar
[2] Baerwald, H.G., Phys. Rev. 105, 480 (1957).Google Scholar
[3] Roy, R.A., Etzold, K.F., Cuomo, J.J. in Ferroelectric Thin Films, edited by Myers, Edward R. and Kingon, Angus I. (Mater.Res. Soc. Proc. 200, Pittsburgh, PA 1990) pp. 141–152.Google Scholar
[4] Iljima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys. 60, 361 (1986).Google Scholar
[5] Croteau, A., Matsubara, S., Miyasaka, Y., Shohata, N., Jap. J. Appl. Phys. 26, 18 (1987).Google Scholar
[6] Sreenivas, K. and Sayer, M., J. Appl. Phys. 64, 1484 (1988).Google Scholar
[7] Okamura, T., Adachi, M., Shiosaki, T., and Kawabata, A., Jap. J. Appl. Phys. 30, 727 (1991).Google Scholar