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Passivation of Zn-Acceptors in InGaAs During Rie with CHF3/H2 and CH4/H2

Published online by Cambridge University Press:  25 February 2011

Martin Möhrle
Martin Möhrle*
Affiliation:
Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin, Federal Republic of Germany
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Abstract

Reactive ion etching of highly Zn-doped InGaAs with hydrogen-containing gases such as CHF3/H2, CH4/H2 and CH4/He leads to a drastical reduction of the concentration of electrically active acceptors in a near-surface layer. Ti/Pt/Au contacts applied on as-treated p++-InGaAs layers show non-ohmic I/V-characteristics due to this passivation effect. Annealing at moderate temperatures (330°C, 20 minutes) was found to restore full electrical activity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 495
Copyright
Copyright © Materials Research Society 1990

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References

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