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Passivation of Surface and Bulk Defects in InP

Published online by Cambridge University Press:  03 September 2012

Sathya Balasubramanian ,
Vikram Kumar ,
N. Balasubramanian  and
V. Premachandran
Sathya Balasubramanian
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore 560012, India.
Vikram Kumar
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore 560012, India.
N. Balasubramanian
Affiliation:
Microelectronics Laboratory, Indian Telephone Industries, Bangalore 560 016, India
V. Premachandran
Affiliation:
Microelectronics Laboratory, Indian Telephone Industries, Bangalore 560 016, India
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Abstract

The effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 413
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Sandroff, C. J., Hegde, M. S., Farrow, L.A., Chang, C. C. and Harbison, J. P., Appl. Phys. Lett., 54, 362 (1984).Google Scholar
2. Skromnie, B. J., Sandroff, C. J., Yablonovitch, E. and Gmitter, T., Appl. Phys. Lett., 51, 2022 (1987).CrossRefGoogle Scholar
3. Spindt, C. J. and Spicer, W. E., Appl. Phys. Lett., 55, 1653 (1989).Google Scholar
4. Carpenter, M. S., Melloch, M. R. and Dungan, T. E., Appl. Phys. Lett., 53, 66 (1988).Google Scholar
5. Oigawa, H., Fan, Jia-Fa, Nannichi, Y., Sugahara, H. and Oshima, M., Jap. J. Appl. Phys., 30 (3A), L322, (1991).Google Scholar
6. Sugino, T., Boonyasirikûol, A. and Shirafuji, J., Electron. Lett., 25, 590 (1989).CrossRefGoogle Scholar
7. Pearton, S. J., Corbett, J. W. and Shi, T. S., Appl. Phys. A 43, 153 (1987).Google Scholar
8. Dautremont-Smith, W. C., Lopata, J., Pearton, S. J., Koszi, L. A., Stavola, M. and Swaminathan, V., J. Appl. Phys., 66, 1993 (1989).CrossRefGoogle Scholar
9. Swaminathan, V., Lopata, J., Siusky, S. E. G., Dautremont-Smith, W. C. and Pearton, S. J., Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers B. V., North-Holland, 1990) p-879.Google Scholar
10. Swaminathan, V. and Macrander, A. T., Materials Aspects of GaAs and InP Based Structures (Prentice Hall, New Jersey, 1991), p-477.Google Scholar
11. Williams, R. H., McLean, A. B., Evans, D. A. and Her renden-Harker, W. G., J. Vac. Sci. Technol., B 4, 966 (1986).CrossRefGoogle Scholar
12. Newman, N., Kendelewicz, T., Bowman, L. and Spicer, W. E., Appl. Phys. Lett., 46, 1176 (1985).CrossRefGoogle Scholar
13. Wilmsen, C. W., Geib, K. M., Shin, J., Iyer, R., Lile, D. L. and Pouch, J. J., J. Vac. Sci. Technol., B 7, 851 (1989).CrossRefGoogle Scholar
14. Spicer, W. E., Lindau, I., Skeath, P., Su, C. Y. and Chye, Patrick, Phys. Rev. Lett., 44, 420 (1980).Google Scholar
15. Borrego, J. M., Gutmann, R. J. and Ashok, S., IEEE Trans. NS-23, 1671 (1976).Google Scholar