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Passivation of N-Type Silicon by Hydrogen

Published online by Cambridge University Press:  26 February 2011

K. Bergman ,
Michael Stavola ,
S. J. Pearton  and
J. Lopata
K. Bergman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Michael Stavola
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Lopata
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Infrared spectroscopy has been used to study hydrogen passivation of P, As, and Sb donors in Si. The spectra show several new absorption bands due to donor-H complexes. By comparing spectra after different heat treatments it is shown directly that the passivation is due to complex formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 281
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent Address: Dept. of Solid State Physics, Univ. of Lund, Box 118, S-221 00 Lund, Sweden

References

REFERENCES

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