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Passivation of N-Type Silicon by Hydrogen

  • K. Bergman (a1), Michael Stavola (a1), S. J. Pearton (a1) and J. Lopata (a1)

Abstract

Infrared spectroscopy has been used to study hydrogen passivation of P, As, and Sb donors in Si. The spectra show several new absorption bands due to donor-H complexes. By comparing spectra after different heat treatments it is shown directly that the passivation is due to complex formation.

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Permanent Address: Dept. of Solid State Physics, Univ. of Lund, Box 118, S-221 00 Lund, Sweden

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1.Pearton, S. J., Corbett, J. W., and Shi, T. S., Appl. Phys. A 43, 153 (1987).
2.Pankove, J. I., Carlson, D. E., Berkeyheyser, J. E., and Wance, R. O., Phys. Rev. Lett. 51, 2224 (1983).
3.Sah, C. T., Sun, J. Y. C., and Tzou, J. J., J. Appl. Phys. 54, 5864 (1983).
4.Pankove, J. I., Wance, R. O., and Berkeyheyser, J. E., Appl. Phys. Lett. 45, 1100 (1984).
5.Johnson, N. M., Herring, C., and Chadi, D. J., Phys. Rev. Lett. 56, 769 (1986).
6.Bergman, K., Stavola, Michael, Pearton, S. J., and Lopata, J., (unpublished).
7.Pajot, B., Newman, R. C., Murray, R., Jalil, A., Chevalier, J., and Azoulay, R., (unpublished).

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Passivation of N-Type Silicon by Hydrogen

  • K. Bergman (a1), Michael Stavola (a1), S. J. Pearton (a1) and J. Lopata (a1)

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