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The Passivation of Gallium Arsenide Surfaces with Selenium from Gaseous Sources

  • G. Y. Gu (a1), E. A. Ogryzlo (a1), P. C. Wong (a1) and K. A. R. Mitchell (a1)

Abstract

Two techniques were used to apply a thin layer of selenium to GaAs (100) surfaces: (a) the thermal decomposition of hydrogen selenide at 120°C, and (b) the deposition of gaseous selenium formed in the reaction of hydrogen atoms with H2Se. Angle dependent XPS measurements show that AsxSey, but not GaxSey, forms on the surface in both cases. This work therefore establishes a surface behavior for selenium on GaAs(100) which contrasts with that described earlier for sulfur on this surface.

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