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Passivation of (111) Si/SiO2 Interfacial Defects by Molecular Hydrogen

Published online by Cambridge University Press:  10 February 2011

Ligia Gheorghita  and
Elmer Ogryzlo
Ligia Gheorghita
Affiliation:
Advanced Materials and Process Engineering Laboratory (AMPEL), University of British Columbia, 2355 East Mall, Vancouver, BC, CanadaV6T 1Z4
Elmer Ogryzlo
Affiliation:
Advanced Materials and Process Engineering Laboratory (AMPEL), University of British Columbia, 2355 East Mall, Vancouver, BC, CanadaV6T 1Z4ogryzlo@chem.ubc.ca
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Abstract

The reaction of molecular hydrogen with Pb defects at the (111) Si/SiO2 interface has been studied using a remote radio frequency (RF) probe to continuously monitor the rate of removal of electrically active defects. The kinetic parameters calculated from these experiments are compared with the earlier work of Brower and Stesmans. Although the data confirms the non-exponential nature of the reaction reported by Stesmans the activation energy of the process is found to be somewhat different.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 271
Copyright
Copyright © Materials Research Society 1999

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References

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