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Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

Published online by Cambridge University Press:  25 February 2011

D. M. Hwang ,
R. Bhat ,
S. A. Schwarz  and
C. Y. Chen
D. M. Hwang
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
R. Bhat
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
S. A. Schwarz
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
C. Y. Chen
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
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Abstract

Partial dislocations and their associated stacking faults are identified as the primary defects responsible for the initial relaxation of tensile-strained layers of fcc structure. The critical thickness for the formation of 90° partial dislocations at the strained interface is almost a factor of two smaller than that predicted for the formation of 60° perfect dislocation. Microstructures revealed by transmission electron microscopy from strained layers of various lattice mismatches and thicknesses agree with the prediction of the standard free-energy minimization model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 421
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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