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Partial Depletion Region Collapse and its Impact on Transient Capacitance Measurements

Published online by Cambridge University Press:  10 February 2011

Klaus Lips ,
Thomas Unold ,
Yueqin Xu  and
Richard S. Crandall
Klaus Lips
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Thomas Unold
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Yueqin Xu
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO
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Abstract

We investigate capacitance transients under various experimental conditions on a number of different amorphous silicon Schottky barrier device structures. The samples differ mainly in their back contact configuration, which is non-ohmic for one type of sample and ohmic for the second type of samples. Anomalous transients can be observed for all samples regardless of the back contact if the depletion region is only partially collapsed by partial voltage pulsing. We find that samples without an ohmic back contact show a slowly rising capacitance during the filling pulse. These samples show anomalous capacitance transients for short filling pulses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 691
Copyright
Copyright © Materials Research Society 1996

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