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Parametric Characterization of Plasma Etching Processes

Published online by Cambridge University Press:  21 February 2011

Michael T. Mocela ,
Mary W. Jenkins ,
Herbert H. Sawin  and
Kenneth D. Allen
Michael T. Mocela
Affiliation:
Freoie®Products Laboratory, E.I. DuPont de Nemours and Company, Wilmington, DE 19898
Mary W. Jenkins
Affiliation:
Engineering Department, E.I. DuPont de Nemours and Company, Wilmington, DE 19898
Herbert H. Sawin
Affiliation:
Department of Chemical Engineering, MIT, Cambridge, MA 02139
Kenneth D. Allen
Affiliation:
Department of Chemical Engineering, MIT, Cambridge, MA 02139
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Abstract

The analysis of plasma etching processes has been explored for the etching of polysilicon films with CF3Cl/Ar discharges. The etching rate is well fit as a function of the macroscopic plasma parameters (power input, pressure, and composition) using Response Surface Methodology. The parametric expression obtained can be used to examine the sensitivity of the process to the operating conditions, and to optimize the process. The parametric expression also permits comparison of the experimental data with physically meaningful kinetic models.

The Response Surface Method allows characterization of a wide parameter space with few experiments. The design of the experimental set is critical to the success of the parametric fit. The parametric expression must account for interactions between parameters, and the expected curvature of the response surface will dictate the required number of data points.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 227
Copyright
Copyright © Materials Research Society 1985

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References

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