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P-And N-Type Implantation Doping Of GaN With Ca And O

Published online by Cambridge University Press:  15 February 2011

J. C. Zolper ,
R. G. Wilson ,
S. J. Pearton  and
R. A. Stall
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
R. G. Wilson
Affiliation:
Hughes Research Laboratory, Malibu CA 90265
S. J. Pearton
Affiliation:
University of Florida, Depart. of Materials Science and Engineering, Gainesville, FL 32611
R. A. Stall
Affiliation:
Emcore Corp., Somerset, NJ 0887
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Abstract

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, we used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite [1] to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1100°C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, we report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 µm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a ft of 2.7 GHz, and a fmax of 9.4 GHz. 0-implantation was also studied and shown to create a shallow donor level (∼25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or0inGaNat 1125°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 189
Copyright
Copyright © Materials Research Society 1996

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