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Panasonic’s Thin Film Silicon Technologies for Advanced Photovoltaics

  • Akira Terakawa (a1), Hiroko Murayama (a1), Yohko Naruse (a1), Hirotaka Katayama (a1), Takeyuki Sekimoto (a1), Shigeo Yata (a1), Mitsuhiro Matsumoto (a1), Isao Yoshida (a1), Mitsuoki Hishida (a1), Youichiro Aya (a1), Masahiro Iseki (a1), Mikio Taguchi (a1) and Makoto Tanaka (a1)...

Abstract

We have fabricated high-efficiency a-Si/µc-Si tandem solar cells and modules with a very high µc-Si deposition rate using Localized Plasma Confinement CVD to give very high-rate deposition (>2.0 nm/s) of device-grade µc-Si layers. For further progress in productive plasma-CVD techniques, we have studied plasma phenomena by combining newly developed plasma simulation and plasma diagnosis techniques that reveal the importance of non-emissive atomic hydrogen. We also have proposed a model of defective µc-Si formation on highly textured substrates in which the atomic H in plasma is assumed to play an important role. We are also developing a non-vacuum deposition technique that we term “Liquid Si Printing.” A new record conversion efficiency for HIT solar cells of 24.7% has been achieved using a very thin c-Si wafer (Thickness: 98 µm, Area: 102 cm2).

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