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P- and N-Type Doping of Mbe Grown Cubic GaN/GaAs Epilayers

Published online by Cambridge University Press:  15 February 2011

D.J. As ,
T. Simonsmeier ,
J. Busch ,
B. Schöttker ,
M. Lübbers ,
J. Mimkes ,
D. Schikora ,
K. Lischka ,
W. Kriegseis  and
W. Burkhardt
...Show all authors
D.J. As
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
T. Simonsmeier
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
J. Busch
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
B. Schöttker
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
M. Lübbers
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
J. Mimkes
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
D. Schikora
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
K. Lischka
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
W. Kriegseis
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
W. Burkhardt
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
B.K. Meyer
Affiliation:
Universität Giessen, I. Physik. Inst., Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
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Abstract

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by if-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of EA= 0.230 eV is observed by low temperature PL. At Mg concentrations above 1018 cm-3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are n-type with electron concentrations up to 5*1019 cm-3. The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of I for Si in c-GaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.24
Copyright
Copyright © Materials Research Society 1999

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