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Oxygen-Related Defects in In0.5(AlxGa1−x)0.5P Grown by MOVPE

Published online by Cambridge University Press:  10 February 2011

J. G. Cederberg ,
B. Bieg ,
J.-W. Huang ,
S. A. Stockman ,
M. J. Peanasky  and
T. F. Kuech
J. G. Cederberg
Affiliation:
University of Wisconsin - Madison, Department of Chemical Engineering, 1415 Engineering Dr., Madison, W1 53706
B. Bieg
Affiliation:
University of Wisconsin - Madison, Department of Chemical Engineering, 1415 Engineering Dr., Madison, W1 53706
J.-W. Huang
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 West Trimble Road, San Jose, CA, 95131
S. A. Stockman
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 West Trimble Road, San Jose, CA, 95131
M. J. Peanasky
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 West Trimble Road, San Jose, CA, 95131
T. F. Kuech
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 West Trimble Road, San Jose, CA, 95131
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Abstract

Oxygen related defects in Al-containing semiconductors have been determined to degrade luminescence efficiency and reduce free carrier lifetime, affecting the performance of light emitting diodes and laser diodes. We have used the oxygen doping source, diethylaluminum ethoxide, (C2H5)2A1OC2H5, to intentionally incorporate oxygen-related defects during growth of In0.5(AlxGa1−x)0.5P by Metalorganic Vapor Phase Epitaxy (MOVPE). Our investigations have identified several defects which are ‘intrinsic’ or present in non-intentionally oxygen-doped n-type In0.5(AlxGa1−x)0.5P as well as those due to oxygen, which introduces defect states near the middle of the conduction band. Deep level transient spectroscopy and photoluminescence data obtained for these defects over a range of composition, are presented illustrating the trends in defect structure with alloy composition. The impact of oxygen contamination on the visible emission spectrum is presented and discussed in terms of the defect structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 611
Copyright
Copyright © Materials Research Society 1998

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