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Oxygen-Enhanced 1.54μm Photoluminescence of Er+3 in Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Favennec et al. (Jap. J. Appl. Phys. 29, L524, 1990) reported that the 1.54μm photoluminescence of Si implanted with Er+3 is activated by oxygen impurities. We observe a significant enhancement in the luminescence in Er-doped silicon epitaxial layers MBE-grown with intentional oxygen contamination. The PL is shown to be a bulk property of the material as it persisted after a partial layer removal by wet etching.
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- Copyright © Materials Research Society 1993
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