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Oxygen Precipitation Effects in Degenerately – Doped Silicon

  • G. A. Rozgonyi (a1), R. J. Jaccodine (a2) and C. W. Pearce (a3)

Abstract

In this paper we report preliminary observations of oxygen precipitation in degenerately-doped silicon using etching, optical microscopy and transmission electron microscopy. It was found that n+ material was resistant to precipitation, but p+ material precipitated readily. A multistep heat treatment starting with a low temperature step to achieve a high supersaturation ratio was sucessfully used to induce precipitation in n+ material.

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1. Yaney, D. S. and Pearce, C. W., Proceedings – International Election Device Meeting 1981, p. 236.
2. deKock, A. J. R. and van de Wijgert, W. M., Appl. Phys. Lett. 38 880 (1981).
3. deKock, A. J. R. and van de Wijgert, W. M., J. Cryst. Growth, 49 718 (1981).
4. Pearce, C. W. and Rozgonyi, G. A., “VLSI Science and Technology/1982”, The Electrochemical Socity, Pennington N.J. p 53.
5. Andrews, J. M., Muller, S., Rozgonyi, G. A. and Clark, C. A., “VLSI Science and Technology/1982”, The Electrochemical Socity, Pennington N.J. p 43.

Oxygen Precipitation Effects in Degenerately – Doped Silicon

  • G. A. Rozgonyi (a1), R. J. Jaccodine (a2) and C. W. Pearce (a3)

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