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Oxides Influence on Electrical Properties of Si and A2B6 Materials.

Published online by Cambridge University Press:  21 March 2011

Andrii Andrukhiv ,
Galina Khlvap ,
Mikhail Andrukhiv  and
Violetta Belosertseva
Andrii Andrukhiv
Affiliation:
Komatsu Silicon America Inc., Hillsboro, OR 97124, U.S.A
Galina Khlvap
Affiliation:
State Pedagogical University, Department of Physics, 24 Franko street, Drogobych, 82100, Ukraine
Mikhail Andrukhiv
Affiliation:
State Pedagogical University, Department of Physics, 24 Franko street, Drogobych, 82100, Ukraine
Violetta Belosertseva
Affiliation:
State Politechnical University, 21 Frunze street, Kharkiv, 61002, Ukraine
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Abstract

It has been shown for the first time how atmospheric oxygen eff ects maj or electrical characteristics of MBE grown CdTe thin f ilms and CVD grown p-/p+ Si junction. I-V and C--V barrier-like characteristics indicate presence of CdO/CdTe quasi-3D microheteroj unctions and complexes at p/p+ interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.11.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Belosertseva, V., Khlyap, G., Basakutsa, V., Andrukhiv, M.. Long-Term Influence of Environmental Oxygen on the Current-Voltage Dependencies of CdTe Thin Films. — IIM '99 Proceedings, Lublin (Poland), 53–57 (1999).Google Scholar
2. Hernandez, E., Cryst. Res. Techn. 33, 285 (1998).Google Scholar
3. Gubanov, A., Semi conductors (Russia) 17, 1679 (1983),.Google Scholar
4. Buliarski, S., Grushko, N., Lakalin, A., Semiconductors (Russia), 32, 1193 (1998).Google Scholar