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Oxide Ferroelectric /Cuprate Superconductor Heterostructures: Growth and Properties

Published online by Cambridge University Press:  25 February 2011

R. Ramesh ,
W.K. Chan ,
H. Gilchrist ,
B. Wilkens ,
T. Sands ,
J.M. Tarascon ,
V.G. Keramidas ,
J.T. Evans Jr ,
F. Dan Gealy  and
D.K. Fork
R. Ramesh
Affiliation:
Bellcore, Red Bank, NJ 07701.
W.K. Chan
Affiliation:
Bellcore, Red Bank, NJ 07701.
H. Gilchrist
Affiliation:
Bellcore, Red Bank, NJ 07701.
B. Wilkens
Affiliation:
Bellcore, Red Bank, NJ 07701.
T. Sands
Affiliation:
Bellcore, Red Bank, NJ 07701.
J.M. Tarascon
Affiliation:
Bellcore, Red Bank, NJ 07701.
V.G. Keramidas
Affiliation:
Bellcore, Red Bank, NJ 07701.
J.T. Evans Jr
Affiliation:
Radiant Technologies Albuquerque, NM 87106
F. Dan Gealy
Affiliation:
Ramtron Corporation Colorado Springs, CO 80921
D.K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94305
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Abstract

Ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures have been grown on single crystal LaAIO3 and on buffered [100] Si. The cuprate superconductors are used as metal-like bottom electrodes for the subsequent growth of the ferroelectric PZT thin film. Structural studies using x-ray diffraction, and transmission electron microscopy show that the PZT layer is free of large angle grain boundaries (i.e., single crystal-like). Rutherford backscattering studies reveal the composition of the PZT layer to be close to that of the target. Ferroelectric hysteresis measurements using both pulsed measurements and a variable frequency Sawyer-Tower circuit yield remnant polarization values (at 5V) in the range of 15-45μC/cm2 (depending on deposition conditions) with a coercive field in the range of 80-120kV/cm. At a cycling voltage of 5V, these heterostructures exhibit a fatigue lifetime of better than 2x1010 at 40kHz (the polarization decays by only 20% of the initial value). Pulsed poling experiments before and after show that the loss of polarization is reversible. These heterostructures also show excellent aging and logic state retention characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 477
Copyright
Copyright © Materials Research Society 1992

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References

1.See for example, Proc. of Materials Research Society Spring Meeting Symposium on “Ferroelectric Thin Films”, Eds. Myers, E.R. and Kingon, A., Materials Research Society, Pittsburgh, PA, April 1990.Google Scholar
2.Proc. of Third Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, April 1991.Google Scholar
3. Scott, J.F. and Araujo, C.A.Paz de, Science, 246, 1400(1989).Google Scholar
4. Sayer, M. and Sreenivas, K., Science, 247, 1056(1990);Google Scholar
5. Dey, S.K., Budd, K.D. and Payne, D.A., IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control, 35, 80(1988); see also papers in Refs.1,2; R.W.Vest and J.Xu, Ferroelectrics, 93, 21(1989).Google Scholar
6. Sakashita, Y., Ono, T., Segawa, H., Tominaga, K. and Okada, M., JI. of Appl. Phys., 69, 8352(1991).Google Scholar
7. Iijima, K., Takayama, R., Tomita, Y., I.Ueda, JI. of Appl. Phys., 60, 2914(1986).Google Scholar
8. Buhay, H., Sinharoy, S., Kasner, W.H., Francombe, M.H., Lampe, D.R. and Stepke, E., Appl Phys. Lett., 58, 1470(1991).Google Scholar
9. Kingon, A.I., Auciello, O., Ameen, M.S., Rou, S.H., Krauss, A.R., Appl. Phys. Lett., 55, 301(1989).Google Scholar
10. Ramesh, R., Inam, A., Wilkens, B., Chan, W.K., Hart, D.L., Luther, K., and Tarascon, J.M., Science, 252, 944(1991).Google Scholar
11. Inam, A. et al. , Appl. Phys. Lett., 53, 908(1988).Google Scholar
12. Ramesh, R. et al. , in Proc. of 1991 Electronic Materials Conference, Boulder, CO., and to be published in JI. of Electronic Materials.Google Scholar
13. Sudhama, C. et al. , in Proc. of MRS Symposium oil “Ferroelectric Thin Films”, Eds. R, E.,Myers and Kingon, A.I., Materials Research Society, Pittsburgh, PA., (1990); V.Chikarmane, et.al., Appl. Phys. Lett., 59, 2850(1991).Google Scholar
14. Scott, J.F. and Pouligny, B., JI. of Appl. Phys., 64, 1547(1988); H.M.Duiker et.al., JI. of Appl. Phys., 68, 5783(1990); R.Ramesh, et.al., submitted to Ferroelectrics.Google Scholar
15. Ramesh, R. et al. , to be submitted to JI. of Materials Research.Google Scholar
16. Abt, N., in Proc. of MRS Symposium on “Ferroelectric Thin Films”, Eds. Myers, E.R. and Kingon, A.I., Materials Research Society, Pittsburgh, PA., (1990).Google Scholar