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Oxidation of Silicon Implanted with High-Dose Aluminum

Published online by Cambridge University Press:  21 February 2011

Zunde Yang ,
Honghua Du  and
Stephen P. Withrow
Zunde Yang
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
Honghua Du
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
Stephen P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Si (100) wafers were implanted with Al at 500°C to high doses at multi-energies and were oxidized in 1 atm flowing oxygen at 1000°–1200°C. The morphology, structure, and oxidation behavior of the implanted and oxidized Si were studied using optical microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy in conjunction with selected area electron diffraction and energy dispersive x-ray analysis. Large Al precipitates were formed and embedded near the surface region of the implanted Si. The oxidation rate of the Al-implanted Si wafers was lower than that of virgin Si. The unique morphology of the implanted Si results from rapid Al diffusion and segregation promoted by hot implantation. The reduction of the oxidation rate of Si by Al implantation is attributed to the preferential oxidation of Al and formation of a continuous difiusion barrier of Al2O3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 207
Copyright
Copyright © Materials Research Society 1995

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