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Oxidation of AU-SI Alloy Films

Published online by Cambridge University Press:  26 February 2011

G A. Hewett ,
K. E. Bohlin ,
M. W. Randoplh  and
S. S. Lau
G A. Hewett
Affiliation:
University of California at San Diego, Department of Electrical Engineering and Computer Science, La Jolla, CA 92093
K. E. Bohlin
Affiliation:
University of California at San Diego, Department of Electrical Engineering and Computer Science, La Jolla, CA 92093
M. W. Randoplh
Affiliation:
University of California at San Diego, Department of Electrical Engineering and Computer Science, La Jolla, CA 92093
S. S. Lau
Affiliation:
University of California at San Diego, Department of Electrical Engineering and Computer Science, La Jolla, CA 92093
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Abstract

We have investigated silicon oxide formation on co-deposited Au-Si alloy films at low temperatures. Alloy compositions spanning the Au-Si binary phase diagram have been examined. It was found that alloys with compositions above 40 at. % Au were most efficient in promoting oxide formation. These results are compared with the Au on Si sample configuration where Si is transported through the Au before oxidizing. The possibility of using alloys to form Au lines with a self passivating oxide coating after patterning and oxidation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 601
Copyright
Copyright © Materials Research Society 1986

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References

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