Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T07:16:06.070Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation Kinetics of Ge+-Ion Implanted Si

Published online by Cambridge University Press:  22 February 2011

O. W. Holland ,
C. W. White  and
D. Fathy
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. Fathy
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Kinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fathy, D., White, C.W., and Holland, O.W., Proceedings of SPIE, Vol.797, ed. by Sayan D. Mukherjee (SPIE, Bellingham, Wash., 1987) p. 83.Google Scholar
2. Fathy, D., Holland, O.W., and White, C.W., Appl. Phys. Lett. 51, 1337 (1987).CrossRefGoogle Scholar
3. Berk, J., Mannaerts, J.P., Feldman, L.C., and Davidson, B.A., Appl. Phys. Lett. 49, 286 (1986).Google Scholar
4. Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J. Vac. Sci. Technol. A 2, 436 (1984).CrossRefGoogle Scholar
5. Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).CrossRefGoogle Scholar
6. Holland, O.W., White, C.W., and Fathy, D., Appl. Phys. Lett. 51, 520 (1987).CrossRefGoogle Scholar
7. Choi, Seong S., Numan, M.Z., and Chu, W.K., Appl. Phys. Lett. 51, 1001 (1987).CrossRefGoogle Scholar