Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-20T21:49:42.274Z Has data issue: false hasContentIssue false
  • English
  • Français

Origin of Voids at the Interface of Wafer Bonded Sapphire on Sapphire

Published online by Cambridge University Press:  21 March 2011

Stephan Senz ,
Pascal Kopperschmidt  and
Nikolai Dimitri Zakharov
Stephan Senz
Affiliation:
Max Planck Institut für Mikrostrukturphysik, Halle (Saale), GERMANY
Pascal Kopperschmidt
Affiliation:
Max Planck Institut für Mikrostrukturphysik, Halle (Saale), GERMANY
Nikolai Dimitri Zakharov
Affiliation:
Max Planck Institut für Mikrostrukturphysik, Halle (Saale), GERMANY
Get access

Abstract

Two sapphire (Al2O3, r-cut) wafers were bonded at room temperature. The bonding energy increased during heating up to 1100 °C. The interface was investigated by plan-view and cross-section TEM. The bonding strength after heating to 1100 °C is similar to the bulk bonding strength. A high density of voids at the bonded interface was observed. The voids are elongated along the interface in a pancake shape. The surfaces are low index planes. The volume inside the voids is higher than expected from a model, where a hydrophobic initial bonding is assumed. The strength of initial bonding and the free volume at the interface can be understood, if the sapphire surfaces are hydrophilic and covered by several monolayers of water during initial bonding. During annealing the water diffuses out along the bonded interface and a free volume remains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.19.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ejeckam, F.E., Lo, Y. H., Subramanian, S., Hou, H.Q. and Hammons, B.E., Appl. Phys. Lett. 70, 1685 (1997).Google Scholar
2. Jesser, W.A., Merve, J.H. van der and Stoop, P.M., J. Appl. Phys. 85, 2129 (1999).Google Scholar
3. Kopperschmidt, P., Ph.D. thesis, University of Halle, Germany (1997).Google Scholar
4. Abe, T., Ohki, K., Uchiyama, A., Nakazawa, K. and Nakazato, Y., Jpn. J. Appl. Phys. 33, 514 (1994).Google Scholar
5. Sugiyama, A., Fukuyama, H., Sasuga, T., Arisawa, T. and Takuma, H., Appl. Optics 37, 2407 (1998).Google Scholar