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Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure

  • T. Benyattou (a1), M. A. Garcia-Perez (a1), S. Moneger (a1), G; Guillot (a1) and C. Caneau (a2)...

Abstract

We report in this paper results from photoluminescence studies on InP/AlInAs/InP double heterostructure. We particuliary focus on the 1.26 eV recombination (also refered as the 1.3 eV transition) that originates from the inverse interface. We will show that its optical properties is related to the non commutativity of the AlInAs/InP band offset.

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Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure

  • T. Benyattou (a1), M. A. Garcia-Perez (a1), S. Moneger (a1), G; Guillot (a1) and C. Caneau (a2)...

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