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Origin of Surface Defects in a-Si:H Films

Published online by Cambridge University Press:  21 February 2011

H. Yan ,
A. Morimoto ,
M. Kumeda ,
T. Shimizu  and
Y. Yonezawa
H. Yan
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
A. Morimoto
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
M. Kumeda
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
T. Shimizu
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Y. Yonezawa
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100°C. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 247
Copyright
Copyright © Materials Research Society 1992

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References

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