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Origin of Imprint in Ferroelectric CSD SrBi2Ta2O9 Thin Films

  • M. Grossmann (a1), O. Lohse (a1), D. Bolten (a1), R. Waser (a1) (a2), W. Hartner (a3), G. Schindler (a3), N. Nagel (a3) and C. Dehm (a3)...

Abstract

The imprint behavior of CSD processed SrBi2Ta2O9 (SBT) thin films has been investigated as a function of time, applied bias, illumination with band gap light and post anneal under different oxygen partial pressures. Applying a bias in the direction of the polarization enhances the tendency of the capacitor to exhibit a voltage shift as well as illuminating the poled capacitor with band gap light. Post anneal after top electrode deposition and patterning under slightly reducing atmospheres does not affect the imprint rate. From these experimental results, a model is presented which explains the imprint behavior of SBT films by transport of electronic charges from the electrodes into the film and subsequent trapping of these charges near the interface.

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Origin of Imprint in Ferroelectric CSD SrBi2Ta2O9 Thin Films

  • M. Grossmann (a1), O. Lohse (a1), D. Bolten (a1), R. Waser (a1) (a2), W. Hartner (a3), G. Schindler (a3), N. Nagel (a3) and C. Dehm (a3)...

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