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The Origin of Anomalous Strain in Thin Sputtered Mo Films on Si(100)

Published online by Cambridge University Press:  22 February 2011

J. Tao ,
D. Adams ,
S. M. Yalisove  and
J. C. Bilello
J. Tao
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
D. Adams
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
S. M. Yalisove
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
J. C. Bilello
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
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Abstract

Stress and structure evolution in thin films of sputtered Mo on Si(100) substrates has been studied, as a function of microstructure, by x-ray diffraction, transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). Double crystal x-ray diffraction topography (DCDT) has been employed to determine film stress as a function of thickness. High compressive stress, about 1000 MPa, is found for the thinnest Mo film. With increasing film thickness a minimal residual stress level is reached. Low incidence angle x-ray diffraction patterns indicated that crystalline Mo is present even in the thinnest films. Line broadening of the Mo(l10) diffraction peak has shown that the grain dimension is comparable to the film thickness over the range studied. Plan view TEM observations of films less than 20nm demonstrated the presence of continuous film with grain dimensions on the order of film thickness, in good agreement with the x-ray results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 57
Copyright
Copyright © Materials Research Society 1992

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References

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