Skip to main content Accessibility help
×
Home

Organometallic Chemical Vapor Deposition of Copper from a New Organometallic Precursor

  • Stephen M. Fine (a1), Paul N. Dyer (a1), John A. T. Norman (a1), Beth A. Muratore (a1) and Robert L. Iampietro (a1)...

Abstract

Thin copper films have been grown on a variety of substrates using Cu(nona-F)2, (bis[4-(2,2,2-trifluoroethyl)imino-1,1,1,5,5,5-hexafluoro-2-pentanonato] copper(II)), a new volatile organometallic copper precursor, and the results are compared with those obtained using copper(II) betadiketonates. Copper films were grown in a cold wall reactor at reduced pressure at temperatures between 270°C and 350°C. For Cu(nona-F)2, films which are pure as determined by Auger electron spectroscopy and have a resistivity of 2.1 micro-ohm cm were deposited at temperatures above 270°C, 40°C lower than was possible using Cu(hfac)2. At low deposition temperatures, Cu(nona-F)2 shows some selectivity towards silicon oxide surfaces in preference to metals. The effects of CVD process parameters on the deposition rate and microstructure of the films were studied with a designed experiment and were statistically modeled. Deposition rates up to 70 nm/min were measured. The standard enthalpy of vaporization of Cu(nona-F)2 was found to be 9.6 kcal/mol.

Copyright

References

Hide All
1. Van Hemert, R. L., Spendlove, L. B.; Sievers, R. E., J. Electrochem Soc., 112, 1123 (1965).
2. Kaloyeros, A. E.; Feng, A.; Garhart, J.; Brooks, K. C.; Ghosh, S. K.; Seetena, A. N.; Luehrs, F., J. Electron, Mater., 19, 271 (1990).
3. Kaloyeros, A. E.; Saxena, A. N.; Brooks, K.; Ghosh, S.; Eisenbraun, E., Advanced Metallizations in Microelectronics, Katz, A.; Murarka, S. P.; Appelbaum, A., eds. (MRS, Pittsburgh, 1990), p. 79.
4. Beach, D. B.; LeGoues, F. K.; Hu, C-K, Chemistry of Materials, 2, 216, (1990).
5. Jeffries, P. M.; Girolami, G. S., Chemistry of Materials, 1, 8 (1989).
6. Charles, R. G.; Cleary, J. G., U.S. Patent No. 3,594,216 (1971).
7. Norman, J. A. T., U.S.Patent No. 4,950,790 (1990).
8. Thomas, B. G.; Morris, M. L.; Hilderbrandt, R. L., J. Mol. Struct., 35, 241 (1976).
9. Temple, D., Reisman, A. J. Electrochem. Soc. 136, 3525 (1989).
10. Hazuki, Y.; Yano, H.; Horioka, K.; Hayasaka, N.; Okano, H., in Tungsten and Other Advanced Metals for VLSI/ULSI Applications, Wong, V., S. S., ; Furukawa, S., eds. (MRS, Pittsburgh, 1990), p. 351.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed