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Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

  • T. R. Cottrell (a1), J. B. Benziger (a1), J. C. Yee (a2), J. K. M. Chunt (a3) and A. B. Bocarslyt (a3)...

Abstract

Organic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

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Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

  • T. R. Cottrell (a1), J. B. Benziger (a1), J. C. Yee (a2), J. K. M. Chunt (a3) and A. B. Bocarslyt (a3)...

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