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Ordinary and Extra-Ordinary Dielectric Function of 4h- and 6H-SiC in the 0.7 to 9.0 eV Photon Energy Range

Published online by Cambridge University Press:  21 March 2011

O. P. A Lindquist ,
K. Järrendahl ,
H. Arwin ,
S. Peters ,
J.-T. Zettler ,
C. Cobet ,
N. Esser ,
D. E. Aspnes ,
A. Henry  and
N. V. Edwards
O. P. A Lindquist
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
K. Järrendahl
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
H. Arwin
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
S. Peters
Affiliation:
SENTECH Instruments GmbH, Carl-Scheele-Str. 16, 12489 Berlin, Germany
J.-T. Zettler
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
C. Cobet
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
N. Esser
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
D. E. Aspnes
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
A. Henry
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
N. V. Edwards
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
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Abstract

We report ordinary <ε┴> and extra-ordinary <ε║> dielectric function data of 4H- and 6H-SiC from 0.7 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are in good qualitative agreement with trends recently reported in ab initio calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.24
Copyright
Copyright © Materials Research Society 2001

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References

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