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Opto-electronic Simulation of GaN Nanowire Lasers

Published online by Cambridge University Press:  01 February 2011

Liang Chen  and
Elias Towe
Liang Chen
Affiliation:
liangc@cmu.edu, RSoft Design Group, Inc., 400 Executive Blvd., Ossining, NY, 10562, United States
Elias Towe
Affiliation:
towe@cmu.edu
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Abstract

A self-consistent, coupled opto-electronic simulation for studying GaN nanowire lasers is presented. The model solves, simultaneously and self-consistently, the carrier transport equations and the photon rate equations. The basic physical model takes into account both bulk and surface dark recombinations, stimulated emission, the anisotropic optical gain typical of the Wurtzite GaN structure, the modified spontaneous emission, and its coupling into the lasing modes by microcavity effects. The model further incorporates band gap shrinkage effects due to band renormalization and the effects of multiple lateral and longitudinal lasing and non-lasing optical modes.

Keywords

nanostructurelasersimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-08
Copyright
Copyright © Materials Research Society 2006

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References

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