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Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge

Published online by Cambridge University Press:  28 February 2011

R. People
R. People*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ. 07974
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Abstract

The optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 299
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] People, R., Phys. Rev. B34, 2508 (1986).Google Scholar
[2] Bean, J. C., in “Proceedings of the 1st Int. Symp. on Si Molecular Beam Epitaxy”, edited by Bean, J. C. (Electrochemical Society Press, Pennington, New Jersey, 1985), p. 337.Google Scholar
[3] Van de Walle, C. G. and Martin, R. M., J. Vac. Sci. Technol. B3, 1256 (1985).Google Scholar
[4] Van de Walle, C. G. and Martin, R. M., Phys. Rev B34, 5621 (1986).Google Scholar
[5] People, R., Phys. Rev. B32, 1405 (1985).Google Scholar
[6] Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., and Ourmazd, A., Appl. Phys. Lett., 49, 286 (1986).Google Scholar
[7] Gnutzmann, V. and Clausecker, K., Appl. Phys. 3, 9 (1974).Google Scholar
[8] Moriarty, J. A. and Krishnamarthy, S., J. Appl. Phys. 54, 1892 (1983).Google Scholar
[9] Jackson, S. A. and People, R., Mat. Res. Soc. Symp. Proc. Vol. 56, 365 (1986).Google Scholar
[10] Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Mannaerts, J. P., and Ourmazd, A., Phys. Rev. Lett., 58, 729 (1987).Google Scholar
[11] People, R. and Jackson, S. A., Bull. Am. Phys. Soc. 32, No. 3, 773 (March 1987).Google Scholar
[12] People, R. and Jackson, S. A., to be published: Phys. Rev. B (1987).Google Scholar
[13] Chelikowsky, J. R. and Cohen, M. L., Phys. Rev. B14, 556 (1976).Google Scholar
[14] Bastard, G., Phys. Rev. B24, 5693 (1981).Google Scholar
[15] Dresselhaus, G. and Dresselhaus, M. S., Phys. Rev. 160, 649 (1967).Google Scholar
[16] Hensel, J. C. and Feher, G., Phys. Rev. 129, 1041 (1963).Google Scholar
[17] Luryi, S., Kastalsky, A., and Bean, J. C., IEEE Trans. Electron Devices, ED–31, 1135 (1984).Google Scholar