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Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

Published online by Cambridge University Press:  21 February 2011

Y.M. Li ,
I. An ,
M. Gunes ,
R.M. Dawson ,
R.W. Collins  and
C.R. Wronski
Y.M. Li
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
I. An
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
M. Gunes
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
R.M. Dawson
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
R.W. Collins
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

We have studied a-Si:H prepared by alternating plasma deposition with atomic H treatments performed with a heated W filament. Real time spectroscopie ellipsometry provides the evolution of film thickness, optical gap, and a measure of the fraction of Si-Si bonds broken in the near-surface (200 Å) during H-exposure of single films. This information guided us to the desired parameters for the H-treatments. Here, we concentrate on a weak hydrogenation regime characterized by minimal etching, a higher H content by 2 at.%, and a larger optical gap by 0.02 eV for the growth/hydrogenation structures in comparison to continuously deposited control samples. This new material has shown an improvement in the defect density in the light-soaked state in comparison to the control samples. This may result from stabilization of the Si structure due to an increase in the H chemical potential in the a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 57
Copyright
Copyright © Materials Research Society 1992

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References

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