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Optoelectronic Properities of A-Ge:H/A-Si:H Superlattic Structures

Published online by Cambridge University Press:  28 February 2011

C. R. Wronski ,
P. D. Persans ,
B. Abeles ,
T. Tiedje  and
M. Hicks
C. R. Wronski
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
P. D. Persans
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
T. Tiedje
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
M. Hicks
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
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Abstract

The optoelectronic properties of multilayer a-Ge:H/a-Si:H superlattices with bandgaps between ˜1.4 and 1.1eV are presented. The dependence of the electronic properties on the band alignment and the layer thicknesses is established and quantified. Particular emphasis is given to properties relevant to practical device applications and which involve carrier transport perpendicular to the layers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 415
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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