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Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

S. A. Safvi ,
N. R. Perkins ,
M. N. Horton ,
A. Thon ,
D. Zhi  and
T. F. Kuech
S. A. Safvi
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706.
N. R. Perkins
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706.
M. N. Horton
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706.
A. Thon
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706.
D. Zhi
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706.
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706. Materials Science Program, University of Wisconsin, Madison, WI 53706.
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Abstract

A numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 227
Copyright
Copyright © Materials Research Society 1996

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