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Optimization of Pd/Zn/Pd/Au Ohmic Contacts to p-Type inGaAs/ InP

  • Patrick W Leech (a1) and Geoffrey K. Reeves (a2)


The electrical properties of Pd/Zn/Pd/Au based ohmic contacts to p-type In0 47Ga0 53As/ InP with an interposed superlattice of 50Å In0 47Gao 53As/ 50 Å InP have been investigated. In this study, several configurations of the Pd/Zn/Pd/Au metallization were fabricated with varying thicknesses of the Zn and interfacial Pd layers in the range 0 to 400 Å. The lowest values of specific contact resistance, ρc, were 1.2 x 10-5 Ω cm2 as-deposited and 7.5 x 106 Ω cm2 for samples annealed at 500 °C. In the as-deposited structures, ρc was reduced by an increase in thickness of both the Zn and Pd layers to 300 Å. For annealed samples, a critical thickness of the Zn ≥ 50 Å and Pd ≥ 100 Å layers was required in order to significantly reduce the magnitude of ρc. These results are consistent with a model of Pd/Zn contacts based on Zn doping of the interface. Studies of thermal stability of the contacts at 400 °C and 500 °C have shown that the Zn/Pd/Au and Pd/Zn/Pd/Au configurations were significanty lower in ρc at extended ageing times than the Pd/Au contacts.



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1 Wasserbauer, J.G. Bowers, J.E., Hafich, M.J., Silvestre, P., Woods, L.M. and Robinson, G.Y., Electron Lett., 28 (17), 1568, (1992).
2 Leech, P.W. and Reeves, G.K., in Interface Control of Electrical. Chemical and Mechanical Properties, edited by Murarka, S., Ohmi, T., Rose, K. and Seidel, T., Mater.Res.Soc.Proc. 318, Boston,MA, (1993).
3 Bruce, R., Clarke, D. and Eicher, S., J.Electron.Mat., 19 (3), 225, (1990).
4 Ivey, D.G., Jian, P., Wan, L., Bruce, R., Eicher, S. and Blaauw, C., J.Electron.Mat., 20, (3), 237, (1991).
5 Wakita, A., Moll, N., Fischer-Colbrie, A. and Stickle, W., J.ApplPhys., 68 (6), 2833, (1990).
6 Reeves, G.K. and Harrison, H.B., IEEE Elecron.Dev.Lett., 1982, EDL–3, 111, (1982).
7 Chen, C.L., Hollis, M.A., Mahoney, L.J., Goodhue, W.D., Manfra, M.J. and Murphy, R.A., J.Vac.Sci.Technol., B5 (4), 902, (1987).
8 Wang, L.C., Wang, X.Z., Hsu, S.N., Lau, S.S., Lin, P.S., Sands, T., Schwartz, S.A., Plumpton, D.L. and Kuech, T.F., J.ApplPhys., 69 (8), 4364, (1991).
9 Zheng, L., J.Appl.Phys., 71 (7), 1, 3566, (1992).

Optimization of Pd/Zn/Pd/Au Ohmic Contacts to p-Type inGaAs/ InP

  • Patrick W Leech (a1) and Geoffrey K. Reeves (a2)


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