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Optimising the Low Temperature Growth of Uniform ZnO Nanowires

  • Nare Gabrielyan (a1), Shashi Paul (a2) and Richard B.M Cross (a3)

Abstract

Zinc oxide (ZnO) nanowires have been widely investigated and various different methods of their synthesis have been suggested. This work is devoted to the optimisation of the growth conditions for uniform in terms of structure and evenly distributed ZnO nanowire arrays. The nanowire growth process includes two steps: 1. Radio-frequency (RF) magnetron sputtering of a ZnO nucleation layer onto a substrate; 2. A hydrothermal growth step of ZnO nanowires using the aforementioned sputtered layer as a template. The optimisation process was divided into two sets of experiments: (i) the deposition of different thicknesses of the ZnO nucleation layer and the subsequent nanowire growth step (using the same conditions) for each thickness. The results revealed a strong dependence of the nanowire size upon the seed layer thickness and structural properties; (ii) a second set of experiments were based on growth solution temperature variation for the nucleation layers of the same thicknesses. This also showed nanowire size and distribution change with solution temperature variation.

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Optimising the Low Temperature Growth of Uniform ZnO Nanowires

  • Nare Gabrielyan (a1), Shashi Paul (a2) and Richard B.M Cross (a3)

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