Skip to main content Accessibility help
×
Home

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

  • Richard Lindsay (a1), Bartlomiej J. Pawlak (a1), Peter Stolk (a1) and Karen Maex (a1)

Abstract

For the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.

As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.

In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.

With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

Copyright

References

Hide All
[1] Murto, R., Proc. 3rd National implant users meeting, Oct 1999
[2] Lindsay, R., Lauwers, A., Frühauf, J., Potter, M. De, and Maex, K.. Proc. USJ2001, p255
[3] Lerch, W., Mattson, Germany, private communication
[4] Al-Bayati, A., Tandon, S., Mayur, A., Foad, M., Wagner, D., Murto, R., Sing, D., Ferguson, C., and Larson, L., Ion Implantation Technology, 2000. p 5461
[5] Ozturk, M. C., Wortman, J.J, Osburn, C. M., Ajmera, A., Rozgonyi, G. A., Frey, E.,Chu, W.K., Lee, C., IEEE Transactions on Electron Devices, Volume: 35 Issue: 5, May 1988 pp.659668
[6] Meyssen, V., Stolk, P., Zijl, J. Van, Berkum, J. Van, Wijgert, W. Van de, Lindsay, R., Dachs, C., Mannino, G., and Cowern, N.. Proceedings of Semicon West, San Francisco, April 2001
[7] Li, H.J.; Kohli, P., Ganguly, S., Kirichenko, T. A., Zeitzoff, P., Torres, K., Banerjee, S., Electron Devices Meeting, IEDM Technical Digest. International, 2000. pp 515518
[8] Robertson, L. S., Warnes, P.N., Law, M. E., Jones, K. S., Downey, D. F., Liu, J., Ion Implantation Technology, 2000, pp.171174
[9] Ban, I., Ozturk, M. C., Demirlioglu, E., IEEE Transactions on Electron Devices, Volume: 44 Issue: 9, Sept. pp 15441551
[10] Pawlak, B.J., Lindsay, R., Surdeanu, R., Stolk, P., Maex, K., submitted to IIT2002-03-25
[11] Talwar, S., Felch, S., Downey, D., Wang, Y., Ion Implantation Technology, 2000. pp175177
[12] Mayur, A., AMAT, Santa Clara, private communication
[13] Gannavaram, S., Pesovic, N., Ozturk, M. C., Electron Devices Meeting, 2000. IEDM Technical Digest. International, pp 437440
[14] Jin, J.Y., Liu, J., Jeong, U., Metha, S., Jones, K., J. Vac. Sci. Tech. B 20(1) 2002, p422
[15] Hong, S. N., Ruggles, G. A., Wortman, J. J., Ozturk, M. C., IEEE Transactions on Electron Devices, Volume: 38 Issue: 3, March 1991 pp 476486
[16] Borland, J. O., Semiconductor International, April 2000, pp7080
[17] Adekoya, W. O., Hage-Ali, M., Muller, J.C., Stiffert, P., J. Appl. Phys. 64 (2) 1988, p666
[18] Osburn, C. M., Downey, D. F., Felch, S. B., Lee, B. S., Ion implantation Tech. 1996, p832
[19] Tsuji, K., Takeuchi, K., Mogami, T., IEDM Tech Dig 1999, p9
[20] Kuznetsov, V. I., Storm, A.B., Snijders, G. J., Ridder, C. de, Ruijl, T. A. M., Sanden, J.C.G vd, Granneman, E.H.A, 197th Meeting of Elect. Chem. Soc May 14-18th 2000, p1
[21] Clarysse, T., Vanhaeren, D., Vanderworst, W., J. Vac. Sci. Tech B 20(1) 2002, p459
[22] Agarwal, A., Fiory, A. T., Gossmann, H.J., Rafferty, C., Frisella, P., Hebb, J., Jackson, J., Ion Implantation Technology Proceedings, 1998, Volume: 1, pp2225
[23] Liebert, R. B., Walther, S. R., Felch, S. B., Fang, Ziwei; Koo, Bon-Woong, Hacker, D., The first international workshop on Junction Technology, 2000, p2327
[24] Shenjun, Z. Berg, J. A. V. D, Armour, D. G., Whelan, S., Goldberg, R. G., Bailey, P., Noakes, T. C. Q., Ion Implantation Technology, 2000, pp119122
[25] Banisaukas, H., Jones, K., Talwar, S., Downey, D. F., Falk, S., Mat. Sci. Semi. Proc. 4 (2001), p339343
[26] Robertson, L. S., PhD Thesis, University of Florida 2001

Related content

Powered by UNSILO

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

  • Richard Lindsay (a1), Bartlomiej J. Pawlak (a1), Peter Stolk (a1) and Karen Maex (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.