Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-19T11:18:45.545Z Has data issue: false hasContentIssue false
  • English
  • Français

Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon

Published online by Cambridge University Press:  25 February 2011

W.M. Chen ,
O.O. Awadelkarim ,
B. Monemar ,
J.L. Lindström  and
G.S. Oehrlein
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
O.O. Awadelkarim
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
J.L. Lindström
Affiliation:
Swedish Defence Research Establishment, P.O. Box 1165, S-581 11 Linköping, SWEDEN
G.S. Oehrlein
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 USA
Get access

Abstract

We present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pearton, S.J., Corbett, J.W. and Shi, T.S., Appl. Phys. A43, 153 (1987).Google Scholar
2 Pankove, J.I., Carlson, D.E., Berkeyheiser, J.E. and Wance, R.O., Phys. Rev. Lett. 51, 2224 (1983); S.J. Pearton, ibid., 53, 855 (1984); J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser and R.O. Wance, ibid., 53, 856 (1984).Google Scholar
3 Johnson, N.M., Phys. Rev. B31, 5525 (1985).Google Scholar
4 Irmscher, K., Klose, H. and Maass, K., J. Phys. C17, 6317 (1984).Google Scholar
5 Picraux, S.T. and Vook, F.L., Phys. Rev. B18, 2066 (1978).Google Scholar
6 Stavola, M., Pearton, S.J., Lopata, J. and Dautremont-Smith, W.C., Appl. Phys. Lett. 50, 1086 (1987); M. Stavola, K. Bergman, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 61, 2786 (1988).Google Scholar
7 Mikkelsen, J.C. Jr., Appl. Phys. Lett 46, 882 (1985).Google Scholar
8 Thewalt, M.L.W., Lightowlers, E.C. and Pankove, J.I., Appl. Phys. Lett. 46, 689 (1985)Google Scholar
9 Singh, M., Weber, J., Zundel, T., Konuma, M. and Cerva, H., Mat. Sci. Forum 38–41, 1033 (1989).Google Scholar
10 Weman, H., Lindström, J.L. and Oehrlein, G.S., presented at the E-MRS Spring Meeting, Strasbourg, France, 1989 (unpublished).Google Scholar
11 DeLeo, G.G., Fowler, W.B. and Watkins, G.D., Phys. Rev. B29, 1819 (1984).Google Scholar
12 Van de Walle, C.G., Bar-Yam, Y. and Pantelides, S.T., Phys. Rev. Lett. 60, 2761 (1988).Google Scholar
13 Chang, K.J. and Chadi, D.J., Phys. Rev. Lett. 62, 937 (1989).Google Scholar
14 Denteneer, P.J.H., Van de Walle, C.G. and Pantelides, S.T., Phys. Rev. Lett. 62, 1884 (1989).Google Scholar
15 Gorelkinskii, Yu.V. and Nevinnyi, N.N., Sov. Tech. Phys. Lett. 13, 45 (1987).Google Scholar
16 Coburn, J.W., Plasma Etching and Reactive Ion Etching (American Vacuum Society Monograph Series, New York, 1982).Google Scholar
17 Abragam, A. and Bleaney, B., Electronic Paramagnetic Resonance of Transition Ions (Clarendon Press, Oxford, 1970).Google Scholar
18 Chen, W.M., Monemar, B. and Godlewski, M., in Defect and Diffusion Forum. Vol. 62/63. edited by von Bardeleben, H.J. (Trans. Tech. Publications, Aedermannsdorf, 1989) p. 133.Google Scholar
19 Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961).Google Scholar
20 Watkins, G.D., in Deep Centers in Semiconductors, edited by Pantelides, S.T. (Gorden and Breach Science Publishers, New York, 1986) p. 147.Google Scholar
21 Sieverts, E.G., Phys. Stat. Sol. (b) 120, 11 (1983).Google Scholar
22 Chen, W.M., Awadelkarim, O.O., Weman, H. and Monemar, B., Phys. Rev. B40, 10013 (1989).Google Scholar