Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-25T04:11:00.268Z Has data issue: false hasContentIssue false
  • English
  • Français

Optically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells

Published online by Cambridge University Press:  17 March 2011

Wei Chen ,
Bhushan Sopori ,
Kim Jones ,
Robert Reedy ,
N. M. Ravindra ,
Roger Aparacio ,
Robert Birkmire ,
Scott Morrison  and
Arun Madan
Wei Chen
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Bhushan Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Kim Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Robert Reedy
Affiliation:
National Renewable Energy Laboratory, Golden, CO
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ
Roger Aparacio
Affiliation:
University of Delaware, Institute of Energy Conversion, Newark, DE
Robert Birkmire
Affiliation:
University of Delaware, Institute of Energy Conversion, Newark, DE
Scott Morrison
Affiliation:
MV Systems, Golden, CO
Arun Madan
Affiliation:
MV Systems, Golden, CO
Get access

Abstract

Optically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC – in particular, whether the metal can be confined to the interface while grain enhancement occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D3.2.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sopori, B., Chen, W., Madjdpour, J., and Symko, M., MRS Symp. Procd., 485, 101 (1998).Google Scholar
[2] Sopori, B., US Patent Nos. 6,201,261 and 5,897,331Google Scholar
[3] Matsuyama, T., Taguchi, M., Tanaka, M., Matsuoka, T., Tsuda, S., Nakano, S. and Kuwano, Y., Jpan. J. Appl. Phys., 29, 2327 (1990).Google Scholar
[4] Lee, S. et al, IEEE Elec. Dev. Lett., 17(8), 407 (1996).Google Scholar