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Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001)

Published online by Cambridge University Press:  01 February 2011

Jun Cheng ,
Ahiram El Akra ,
Catherine Bru-Chevallier ,
Gilles Patriarche ,
Ludovic LARGEAU ,
Philippe Regreny ,
Guy Hollinger  and
Guillaume Saint-Girons
Jun Cheng
Affiliation:
Jun.cheng@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Ahiram El Akra
Affiliation:
ahiram.el-akra@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Catherine Bru-Chevallier
Affiliation:
catherine.bru-chevallier@insa-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Gilles Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures, Marcoussis, France
Ludovic LARGEAU
Affiliation:
Ludovic.Largeau@lpn.cnrs.fr, United States
Philippe Regreny
Affiliation:
Philippe.Regreny@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Guy Hollinger
Affiliation:
guy.hollinger@ec-lyon.fr, United States
Guillaume Saint-Girons
Affiliation:
Guillaume.Saint-Girons@ec-lyon.fr, INL, Ecole Centrale de Lyon, Lyon, France
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Abstract

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13K, the photoluminescence (PL) yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of non-radiative mechanisms for the sample grown on SrTiO3. The main non-radiative channel is related to the thermal excitation of the holes to the first heavy hole excited state, followed by the non-radiative recombination of the carriers on twins and/or domain boundaries, in the immediate vicinity of the well.

Keywords

crystal growthIII-Voptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposium I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-J03-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Singer, P. Solid State Technology, IEDM (2009)Google Scholar
2 Deppe, D. G. Holonyak, N. Jr. , Nam, D. W. Hsieh, K. C. Jackson, G. S. Matyi, R. J. Shichijo, H., Epler, J. E. Chung, H. F. Appl. Phys. Lett. 51, 637 (1987)Google Scholar
3 Ting, S.M. and Fitzgerald, E.A. J. Appl. Phys. 87, 2618, (2000).Google Scholar
4 Kostrzewa, M. Grenet, G. Regreny, P. Leclercq, J.L. Perreau, P. Jalaguier, E. DiCioccio, L. and Hollinger, G. J. Cryst. Growth 275, 157, (2005).Google Scholar
5 Yoo, S. J. B. Bhat, R. Caneau, C. and Koza, M. A. Appl. Phys. Lett. 66, 3410, (1995)Google Scholar
6 Wang, Y. Ganpule, C. Liu, B. T. Li, H. Mori, K. Hill, B. Wuttig, M. Ramesh, R. Finder, J. Yu, Z., Droopad, R. and Eisenbeiser, K. Appl. Phys. Lett. 80, 97, (2002)Google Scholar
7 Norga, G. J. Marchiori, C. Rossel, C. Guiller, A. J. Appl. Phys. 99, 084102 (2006).Google Scholar
8 Eisenbeiser, K. Emrick, R. Droopad, R. Yu, Z. Finder, J. Rockwell, S. and Holmes, J. Electron. Dev. Lett. 23, 300, (2002)Google Scholar
9 Giussani, A. Rodenbach, P. Zaumseil, P. Dabrowski, J. Kurps, R. Weidner, G. and Schroeder, T., J. Appl. Phys. 105, 033512 (2009)Google Scholar
10 Seo, J.W. Dieker, C. Tapponier, A. Marchiori, C. Sousa, M. Ipsas, A., and Dimoulas, A. Microelec Eng. 84, 2328 (2007)Google Scholar
11 Saint-Girons, G., Cheng, J., Regreny, P. Largeau, L. Patriarche, G. and Hollinger, G. Phys. Rev. B, 80, 155038 (2009)Google Scholar
12 Saint-Girons, G., G, P. Regreny Largeau L, L., Patriarche, G. Hollinger, G. Appl. Phys. Lett. 91, 241912 (2007).Google Scholar
13 Cheng, J. Regreny, P. Largeau, L. Patriarche, G. Regreny, P. Saint-Girons, G., Appl. Phys. Lett. 94, 231902, (2009)Google Scholar
14 Dean, P. J. Phys. Rev. 157, 655, (1967)Google Scholar
15 Saint-Girons, G. and Sagnes, I. J. Appl. Phys. 91, 10115, (2002)Google Scholar
16 Lin, Z. H. Wang, T. Y. Stringfellow, G. B. and Taylor, P. C. Appl. Phys. Lett. 52, 1590, (1988)Google Scholar
17 Lipsanen, H. Sopanen, M. Ahopelto, J. Sandmann, J. and Feldmann, J. Jpn. J. Appl. Phys. Part 1 38, 1133, (1999)Google Scholar
18 Seaman, B.T., Carr, L.D. and Holland, M.J. Phys. Rev. A 71, 033622 (2005)Google Scholar
19 Saint-Girons, G., Priester, C. Regreny, P. and al. Appl. Phys. Lett. 92, 241907 (2008)Google Scholar
20 Saint-Gironsl, G., Cheng, J. Regreny, P. Largeau, L. Patriarche, G. and Hollinger, G. Phys. Rev. B 80, 155308 (2009)Google Scholar
21 Cheng, J. Regreny, P. Largeau, L. Patriarche, G. Mauguin, O. Naji, K. Hollinger, G. Saint-Girons, G., J. Cryst. Growth 311, 1042, (2009).Google Scholar