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Optical Studies of the Internal Electric Field Distributions of CdZnTe Detectors Under Bias Conditions

Published online by Cambridge University Press:  10 February 2011

H. W. Yao ,
R. J. Anderson ,
R. B. James  and
R. W. Olsen
H. W. Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588-0511, hyao@unl.edu
R. J. Anderson
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
R. W. Olsen
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
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Abstract

The internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energyband model of a semiconductor junction with a depletion layer was employed to understand the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 51
Copyright
Copyright © Materials Research Society 1998

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