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Optical Spectroscopy of the Charge Accumulation Layer in Mis Structures with Polymeric Insulator and Semiconductor Layers

  • J. H. Burroughes (a1) and R. H. Friend (a1)

Abstract

Metal-Insulator-Semiconductor (MIS) and MISFET structures constructed with polyacetylene prepared by the Durham precursor route provide convenient systems for the investigation of charge storage and transport in this polymer. The charge accumulation layer is particularly easy to form, and is of particular interest because charge is introduced into the polymer without compensation by chemical dopants. Charge is stored in soliton-like excitations of the chain, and we are able to characterise these from optical measurements of their electronic excitations. We find that the nature of the soliton-like states is very sensitive to the structure of the polyacetylene at the interface between the insulator and polyacetylene, and we report here the properties of devices formed with various organic polymers as the insulator layers which we contrast with those formed with silicon dioxide.

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References

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1. Edwards, J. H. and Feast, W. J., Polymer Commun. 21, 595 (1980).
2. Burroughes, J. H., Jones, C. A. and Friend, R. H., Nature 335, 136 (1988).
3. Burroughes, J. H., Jones, C. A., Lawrence, R. A. and Friend, R. H., in Conjugated Polymeric Materials: Opportunities in Electronics. Optoelectronics and Molecular Electronics, edited by Brédas, J-L and Chance, R. R., proceedings of NATO-ARW, Mons, Belgium, September 1989 (in press).
4. Tomozawa, H., Braun, D., Phillips, S., Heeger, A. J. and Kroemer, H., Synthetic Metals, 22, 63 (1987); 28, 687 (1989)
5. Garnier, F. and Horowitz, G., Synthetic Metals 18, 693 (1987)
6. Garnier, F., Horowitz, G. and Fichou, D., Synthetic Metals 28, 705 (1989).
7. Koezuka, H. and Tsumara, A., Synthetic Metals 28, 753 (1989).
8. Assadi, A., Svensson, C., Willander, M. and Inganäs, O., Appl. Phys. Lett. 53, 195 (1988) .
9. Paloheimo, J., Punkka, E., Kuivalainen, P., Stubb, H. and Yli-Lahti, P., Acta Scandinavica, Electrical Engineering Series, No. El 64, 178 (1989).
10. Su, W. P., Schrieffer, J. R. and Heeger, A. J.: Phys. Rev. Lett. 42, 1698 (1979);
Phys. Rev. B22, 2099 (1980); B28Z, 1138(E) (1983).
11. Lawrence, R. A., Burroughes, J. H. and Friend, R. H., Springer Series on Solid State Sciences, 91, 127 (1989).
12. Townsend, P. D. and Friend, R. H., Phys. Rev. B40, 3112 (1989).
13. Friend, R. H., Bradley, D. D. C. and Townsend, P. D., J. Phys. D20, 1367 (1987).
14. Goetzberger, A. and Nicollian, E. H., Appl. Phys. Lett. 9, 12 (1966).
15. Worland, R., Phillips, S. D., Walker, W. C. and Heeger, A. J., Synthetic Metals 28, D663 (1989).
16. Phillips, S. D., Worland, R., Yu, G., Hagler, T., Freedman, R., Cao, Y., Yoon, V., Chiang, J., Walker, W. C. and Heeger, A. J. (preprint 1989).

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