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Optical Quenching of Photoconductivity in GaN Photo-conductors

Published online by Cambridge University Press:  10 February 2011

Z.C. Huang ,
D.B. Mott ,
P.K. Shu ,
R. Zhang ,
J.C. Chen  and
D.K. Wickenden
Z.C. Huang
Affiliation:
NASA Goddard Space Flight Center, Solid State Device Development Branch, Code 718, Greenbelt, MD 20771
D.B. Mott
Affiliation:
NASA Goddard Space Flight Center, Solid State Device Development Branch, Code 718, Greenbelt, MD 20771
P.K. Shu
Affiliation:
NASA Goddard Space Flight Center, Solid State Device Development Branch, Code 718, Greenbelt, MD 20771
R. Zhang
Affiliation:
Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
J.C. Chen
Affiliation:
Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
D.K. Wickenden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723
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Abstract

We report the first observation of optical quenching of photoconductivity in GaN photoconductors at room temperature. Three prominent quenching bands were found at Ev+1.44, 1.58 and 2.20 eV, respectively. These levels are related to the three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He-Ne laser shining on the detector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 799
Copyright
Copyright © Materials Research Society 1997

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References

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