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Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices

  • Plamen Paskov (a1), Bo Monemar (a2), Satoshi Kamyiama (a3), Hiroshi Amano (a4) and Isamu Akasaki (a5)...

Abstract

We report a photoluminescence study of near-surface GaN/AlN superlattices grown by metalorganic chemical vapor deposition (MOCVD) on a thick GaN layer. Undoped, Si-doped and Mg-doped structures with the well/barrier thickness ratio 3:1 and different periods are investigated. It is found that the energy position, intensity and linewidth of the emission are determined by the interplay of the built-in polarization field, depletion field and screening by the free carriers. In n-type structures an electron accumulation at the bottom interface is evidenced by the observed recombination of the two-electron gas with the photo-excited holes.

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1. Keller, S., Heikman, S., Ben-Yaacov, I., Shen, L., DenBaars, S. P. and Mishra, U. K., Appl. Phys. Lett. 79, 3449 (2001).
2. Yamaguchi, S., Kosaki, M., Watanabe, Y., Yukawa, Y., Nitta, S., Amano, H. and Akasaki, I., Appl. Phys. Lett. 79, 3062 (2001).
3. Paskov, P. P., Bergman, J. P., Darakchieva, V., Paskova, T., Monemar, B., Iwaya, M.,Kamiyama, S., Amano, H. and Akasaki, I., Phys. Stat. Sol. (c) 2, 2345 (2005).

Keywords

Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices

  • Plamen Paskov (a1), Bo Monemar (a2), Satoshi Kamyiama (a3), Hiroshi Amano (a4) and Isamu Akasaki (a5)...

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