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Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

  • H. Morkoç (a1), W. Kim (a2), Ö. Aktas (a2), A. Salvador (a2), A. Botchkarev (a2), D. C. Reynolds (a3), D. C. Look (a3), M. Smith (a4), G. D. Chen (a4), J. Y. Lin (a4), H. X. Jiang (a4), T.J. Schmidt (a5), X.H. Yang (a5), W. Shan (a5), J.J. Song (a5), B. Goldenberg (a6), C. W. Litton (a7) and K. Evans (a7)...

Abstract

GaN films and GaN/AlGaN heterostructures have been gro wn by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be ∼90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

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