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Optical Properties of AlGaAsSb, AlGalnP, AlGaInAs, and GaInAsP for Optoelectronic Applications

Published online by Cambridge University Press:  15 February 2011

M. Linnik  and
A. Christou
M. Linnik
Affiliation:
Materials and Engineering Department, University of Maryland, College Park, MD 20742
A. Christou
Affiliation:
Materials and Engineering Department, University of Maryland, College Park, MD 20742
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Abstract

The authors present calculations of quaternary III–V semiconductor alloy optical properties and the comparison of the theoretical data with available experimental results for AlGaAsSb, AlGaInP, AlGaInAs, and GaInAsP alloys. The investigation includes material's energy bandgap and refractive index calculations as a function of the incident wavelength in the transparent region, as well as the composition of the alloy. Optimization of the quaternary alloy refractive indices was obtained from a semi-empirical dielectric function calculations based on the interband transition contributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999 , 201
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Abid, H., Rezki, M., and Aourag, H., Mater. Science and Engin. B41, 314 (1996).Google Scholar
2. Chandra, R., Coldren, L.A., and Strege, K.E., Electron. Lett., 17(1), 6 (1981).Google Scholar
3. Wemple, S.H. and DiDomenico, M., Phys. Rev. B., 3(4), 1338 (1971).Google Scholar
4. Afromowitz, M.A., Solid State Commun., 15, 59 (1974).Google Scholar
5. Buus, J. and Adams, M.J., Solid State Electron Devices, 3, 189 (1979).Google Scholar
6. Utaka, K., Suematsu, Y., Kobayashi, K., and Kawanishi, H., Jpn. J. Appl. Phys., 19, L137 (1980).Google Scholar
7. Burkhard, H., Dinges, H.W., and Kuphal, E., J. Appl. Phys., 53, 655 (1982).Google Scholar
8. Adachi, S., J. Appl. Phys., 53(8), 5862 (1982).Google Scholar
9. Broberg, B., and Lindgren, S., J. Appl. Phys., 55(9), 3376 (1984).Google Scholar
10. Glisson, T.H., Hauser, J.R., Litteljohn, M.A., and Williams, C.K., J. Electr. Mater., 7(1), 1(1978).Google Scholar
11. Williams, C.K., Glisson, T., Hauser, J., and Litteljohn, M.A., J. Electron. Mater., 7(5), 639 (1978).Google Scholar
12. Blum, O., Fritz, I.J., Dawson, L.R., and Drummond, T.J., Electron. Lett., 31(15), 1247 (1995).Google Scholar
13. Blum, O., Fritz, I.J., Dawson, L.R., Howard, A.J., Headley, T.J., and Klein, J.F., Appl. Phys. Lett., 66(3), 329 (1995).Google Scholar
14. Adachi, S., J. Appl. Phys., 61(10), 4869 (1987).Google Scholar
15. Tanaka, H., Kawamura, Y., and Asahi, H., J. Appl. Phys., 59(3), 985 (1986).Google Scholar
16. Mondry, M., Babic, D., Bowers, J., and Coldren, L., IEEE Photon. Techn. Lett. 4(6), 1041(1992).Google Scholar
17. Dwiges, H., Burkhard, H., Losch, R., Nickel, H., and Schlapp, W., Mater. Science and Engin., B12, 174 (1993).Google Scholar
18. Bernardi, C., Morasca, M., Rigo, C., Sordo, B., and Stano, A., J. Appl. Phys., 68(12), 6512(1990).Google Scholar
19. Jensen, B., and Torabi, A., J. Appl. Phys., 54(6), 3623 (1983).Google Scholar