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Optical Properties and Internal Photoemission in Epitaxial Composites of CoSi2 Particles in Silicon

Published online by Cambridge University Press:  22 February 2011

J. R. Jimenez ,
L. J. Schowalter  and
R. W. Fathauer
J. R. Jimenez
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
L. J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
R. W. Fathauer
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
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Abstract

An analysis of optical absorption and internal photoemission in epitaxial CoSi2 particles buried in silicon is carried out. The optical absorption is dominated by the well-known surface plasma resonance, and calculations of the surface plasma frequencies, using the previously measured dielectric constant of CoSi2, agree well with experiment. A model for the photoemission yield is presented which includes the effects of the surface plasmon excitation and decay. The model can reproduce the observed features of the yield in photoresponse experiments. A model for the replenishment of photoemitted carriers is also presented, in which the metal particles acquire a small steady-state charge under illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 513
Copyright
Copyright © Materials Research Society 1991

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References

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